We designed a new model tunnel field-effect transistor (TFET) based on Triple Heterojunction Tunnel Field Effect Transistor (THJ-TFET) is investigated and designed in this paper. This structure has a complex body with a metal oxide semiconductor field effect transistor. The integral switching mechanism of Triple Heterojunction TFET differs from conventional TFET and its construction, analytical modeling, and BTBT operations are well suitable for low power electronics. Here triple heterojunction (THJ) tunnel field-effect transistor (THJ-TFET) has been recommended to find the solution for less power usage test for new designs. The Triple Hetero junction TFET device is made up of semiconductors like silicon (Si), Silicon Dioxide (SiO2), Hafnium Oxide (HfO2), and Titanium Dioxide (TiO2) materials are very potential. The Triple Hetero Junction-Tunnel FET device layout with 60 nanometers dimensions and an overall gate length of 5 nm technology is used for the designing of the proposed device (THJ-TFET). The THJ-TFET structure is invented using the TCAD tool with a channel length of 5 nm innovations. Hence Triple Hetero Junction TFET device achieved 5% more drain current (Ion) and has calibrated all the analog parameters and RF parameters.
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