Nexpria extends WBG portfolio with new SiC Schottky diodes

The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications and are intended for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.

These Schottky diodes provide temperature-independent capacitive switching and zero recovery behaviour, delivering an impressive figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current and switching speed variations.

The merged PiN Schottky (MPS) structure of these devices provides additional benefits, such as robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature mitigates the requirement for additional protection circuitry and significantly reduces system complexity, enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.

The PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package.

These are thermally stable packages, and they enhance device reliability in high-voltage applications at operating temperatures up to 175 °C.